1/6 EMIF04-10006f1 ? march 2004 - ed: 3 iec 61000-4-2 level 4: 15kv (air discharge) 8 kv (contact discharge) mil std 883e - method 3015-6 class 3: 30kv complies with the following standards : flip-chip package ? i3 o3 d1 d2 d3 gnd gnd gnd d4 i2 o2 i4 o4 i1 o1 987 654 321 a b c pin configuration (ball side) emi symmetrical (i/o) low-pass filter high efficiency in emi filtering very low pcb space consuming: 2.92mm x 1.29mm very thin package: 0.65 mm high efficiency in esd suppression (iec61000-4-2 level 4) high reliability offered by monolithic integration high reducing of parasitic elements through integration and wafer level packaging. benefits 4 lines emi filter and esd protection ipad tm where emi filtering in esd sensitive equipment is required: mobile phones and communication systems computers, printers and mcu boards main product characteristics the EMIF04-10006f1 is a highly integrated devices designed to suppress emi/rfi noise in all systems subjected to electromagnetic interferences. the emif04 flip-chip packaging means the package size is equal to the die size. this filter includes an esd protection circuitry which prevents the device from destruction when subjected to esd surges up 15kv. this device includes four emif filters and 4 separated esd diodes. description tm : ipad is a trademark of stmicroelectronics. output 4 input 1 30pf 30pf 100 ? output 1 input 4 30pf 30pf 100 ? d1 d2 30pf 30pf d3 d4 30pf 30pf input 2 30pf 30pf 100 ? output 2 input 3 30pf 30pf 100 ? output 3 basic cell configuration
EMIF04-10006f1 2/6 symbol parameter and test conditions value unit p r dc power per resistance 0.1 w p t total dc power per package 0.6 w t j maximum junction temperature 125 c t op operating temperature range -40 to + 85 c t stg storage temperature range 125 c absolute ratings (limiting values) symbol parameter v br breakdown voltage i rm leakage current @ v rm v rm stand-off voltage v cl clamping voltage r d dynamic impedance i pp peak pulse current r i/o series resistance between input and output c line capacitance per line electrical characteristics (t amb = 25 c) i v i f v f i rm i r i pp v rm v br v cl symbol test conditions min. typ. max. unit v br i r =1ma 5.5 7 9 v i rm v rm = 3.3 v per line 500 na r i/o i=10ma 80 100 120 ? c line v r = 2.5 v, f = 1 mhz, 30 mv (on filter cells) 50 60 70 pf
EMIF04-10006f1 3/6 100.0k 1.0m 10.0m 100.0m 1.0g -50.00 -37.50 -25.00 -12.50 0.00 db f/hz simulation measurement 100.0k 1.0m 10.0m 100.0m 1.0g -50.00 -37.50 -25.00 -12.50 0.00 db f/hz simulation measurement simulation measurement fig. 1: s21 (db) attenuation measurements and aplac simulation. aplac 7.62 user: st microelectronics 100k 1m 10m 100m 1g 00 -25 -50 -75 -100 aplac 7.62 user: st microelectronics db db i3_o2.s2p f/hz fig. 2: analog crosstalk measurements. fig. 3: digital crosstalk measurements. fig. 4: esd response to iec61000-4-2 (+15kv air discharge) on one input v(in) and one output v(out). fig. 5: esd response to iec61000-4-2 (-15kv air discharge) on one input v(in) and one output v(out). 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v(v) r c(pf) f=1mhz v osc =30mv rms t j =25c fig. 6: line capacitance versus applied voltage for filter.
EMIF04-10006f1 4/6 EMIF04-10006f1 model ground return for each gnd bump oi * = output of each filter cell ii* = input of each filter cell oi* cz=41pf@0v cz=41pf@0v sub rs=100 lbump rbump rsub cbump ii* rsub lbump rbump cbump di* cz=41pf@0v cz=41pf@0v sub lbump rbump rsub cbump dj * rsub lbump rbump cbump with dj* = d1 & d3 and di* = d2 & d4 sub lbump rbump sub rsub lgnd rgnd cgnd cgnd cgnd aplac model aplacvar rs 100 aplacvar cz 41 pf aplacvar lbump 50 ph aplacvar rbump 20 m aplacvar cbump 1.2 pf aplacvar rsub 100 m aplacvar rgnd 100 m aplacvar lgnd 100 ph aplacvar cgnd 0.15 pf aplac parameters
EMIF04-10006f1 5/6 emif yy xxx zz f 1 - emi filter number of lines x: resistance value ( ) z: capacitance value / 10 (pf) or application (3 letters) and version (2 digits) ? flip chip pitch = 500m bump = 315m order code 2.92mm 50m 1.29mm 50m 435m 50 315m 50 501m 50 500m 50 250m 50 650m 65 package mechanical data 545 545 400 100 230 x y x w x w dot, st logo xxx = marking yww = datecode (y = year ww = week) all dimensions in m marking copper pad diameter : 250m recommended , 300m max solder stencil opening : 330m solder mask opening recommendation : 340m min for 300m copper pad diameter foot print recommendations
EMIF04-10006f1 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not au - thorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved. stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com note: more packing informations are available in the application note an1235: ''flip-chip: package description and recommandations for use'' dot identifying pin a1 location user direction of unreeling all dimensions in mm 4 +/- 0.1 8 +/- 0.3 4 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.1 ? 1.5 +/- 0.1 0.73 +/- 0.05 st xxx yww st xxx yww st xxx yww flip-chip tape and reel specification ordering code marking package weight base qty delivery mode EMIF04-10006f1 fst flip-chip 5.4 mg 5000 tape & reel other information
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